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HFH12N60 Datasheet, PDF (1/6 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – N-Channel Enhancement Mode Field Effect Transistor | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
HFH12N60
N-Channel Enhancement Mode Field Effect Transistor
â General Description
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, this advanced technology has been
especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation
mode . These devices are well suited for high efficiency switch mode power supply,
power factor correction, electronic lamp ballast based on half bridge.
â Features
⢠12A, 600V(See Note), RDS(on) <0.65â¦@VGS = 10 V
⢠Fast switching
⢠100% avalanche tested
⢠Improved dv/dt capability
⢠RoHS compliant
â Maximum Ratingsï¼Ta=25â unless otherwise specifiedï¼
TO-3P
1- G 2-D 3-S
TstgââStorage Temperature ------------------------------------------------------ -55~150â
Tj ââOperating Junction Temperature -------------------------------------------------- 150â
VDSS ââ Drain-Source Voltage ----------------------------------------------------------600V
VGSS ââ Gate-Source Voltage --------------------------------------------------------------------------- ±30V
ID ââ Drain Current (Continuous)(Tc=25â)----------------------------------------------------------- 12A
IDM ââ Pulsed Drain Current (Note 1)----------------------------------------------------------------- 48A
PD ââ Maximum Power Dissipation (Tc=25â)------------------------------------------------------ 300W
Derate Above 25â ------------------------------------------------------------------------- 2.38W/â
EASââ Pulsed Avalanche Energy (Note 2) ----------------------------------------------------------- 960mJ
IARââ Avalanche Current (Note 1) ----------------------------------------------------------------------- 12A
EAR ââ Repetitive Avalanche Energy (Note 1) ------------------------------------------------------- 30mJ
dv/dt ââ Peak Diode Recovery dv/dt (Note 3) ------------------------------------------------------4.0V/ns
â Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TO-3P
Max 0.42
Max 40
Unit
â/W
â/W
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