 English |
|
|
|
|
|
|
|
| HFF640 Datasheet, PDF (1/5 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – N-Channel MOSFET | |||
| |||
|
Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFF640
APPLICATIONSL
High Voltage High-Speed Switching.
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
Tj Operating Junction Temperature
PD
Allowable Power Dissipation Tc=25
VDSS
Drain-Source Voltage
VDGR
Drain-Gate Voltage (RGS=1M )
VGSS
Gate-Source Voltage
ID
*Drain Current Tc=25
* Drain current limited by maximumjunction temperature
5 5 ~1 5 0
150
43W
200V
200V
±20V
18A
ELECTRICAL CHARACTERISTICS Ta=25
TO-220F
1
1G
2D
3S
Symbol
Characteristic s
Min Typ
BVDSS Drain-Source Breakdown Voltage 200
IDSS Zero Gate Voltage Drain Current
IGSS Gate âSource Leakage Current
VGS(th) Gate Threshold Voltage
2.0
RDS(on) Static Drain-Source On-Resistance
gfs Forward Transconductance
Ciss Input Capacitance
Coss Output Capacitance
175
Crss Reverse Transfer Capacitance
45
td(on) Turn - On Delay Time
20
tr Rise Time
145
td(off) Turn - Off Delay Time
145
tf
Fall Time
110
Qg Total Gate Charge
45
Qgs GateâSource Charge
6.5
Qgd GateâDrain Charge
22
Is Continuous Source Current
VSD
Rth j-c
Diode Forward Voltage
Thermal Resistance
Junction-to-Case
*Pulse Test Pulse Width 300 s Duty Cycle 2%
Max Unit
Test Conditions
V ID=250 A ,VGS=0V
VDS =200V VGS=0
100
VGS= 20V , VDS =0V
4.0 V VDS = VGS , ID =250 A
? VGS=10V, ID =9A
S VDS = 40V , ID =9A*
pF
230 pF
60 pF
50 nS
300 nS
300 nS
230 nS
58 nC
VDS =25V, VGS=0,f=1
VDD =100V,
ID =18A
RG= 25 *
VDS =0.8VDSS
nC
nC
IS =18A , VGS=0
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese