HFF5N60 Datasheet, PDF (1/6 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – N-Channel Enhancement Mode Field Effect Transistor

Shantou Huashan Electronic Devices Co.,Ltd.
HFF5N60
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, this advanced technology has been
especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation
mode . These devices are well suited for high efficiency switch mode power supply,
power factor correction, electronic lamp ballast based on half bridge.
█ Features
• 4.5A, 600V(See Note), R_DS(on) <2.5Ω@V_GS = 10 V
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Equivalent Type: FQPF5N60C
█ Maximum Ratings（Ta=25℃ unless otherwise specified）
TO-220F
1
1- G 2-D 3-S
T_stg——Storage Temperature ------------------------------------------------------ -55~150℃
T_j ——Operating Junction Temperature -------------------------------------------------- 150℃
V_DSS —— Drain-Source Voltage ----------------------------------------------------------600V
V_GSS —— Gate-Source Voltage --------------------------------------------------------------------------- ±30V
I_D —— Drain Current (Continuous)(T_c=25℃)----------------------------------------------------------- 4.5A
I_DM —— Pulsed Drain Current (Note 1)------------------------------------------------------------------- 18A
P_D —— Maximum Power Dissipation (T_c=25℃)-------------------------------------------------------- 33W
Derate Above 25℃ ------------------------------------------------------------------------- 0.26W/℃
E_AS—— Pulsed Avalanche Energy (Note 2) ----------------------------------------------------------- 210mJ
I_AR—— Avalanche Current (Note 1) ----------------------------------------------------------------------- 4.5A
E_AR —— Repetitive Avalanche Energy (Note 1) ------------------------------------------------------- 10mJ
dv/dt —— Peak Diode Recovery dv/dt (Note 3) ------------------------------------------------------4.5V/ns
█ Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TO-220F
Max 3.79
Max 62.5
Unit
℃/W
℃/W