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| HFF2N60 Datasheet, PDF (1/5 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – N-Channel MOSFET | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFF2N60
APPLICATIONSL
High-Speed Switching.
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
Tj Operating Junction Temperature
PD
Allowable Power Dissipation Tc=25
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
Drain Current Tc=25
5 5 ~1 5 0
150
23W
600V
±30V
2.0A
TO-220F
1G
2D
3S
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
Characteristics
Min Typ
BVDSS Drain-Source Breakdown Voltage 600
IDSS Zero Gate Voltage Drain Current
IGSS Gate âSource Leakage Current
VGS(th) Gate Threshold Voltage
2.0
RDS(on) Static Drain-Source On-Resistance
gfs Forward Transconductance
Ciss Input Capacitance
Coss Output Capacitance
20
Crss Reverse Transfer Capacitance
4.3
td(on) Turn - On Delay Time
9
tr Rise Time
25
td(off) Turn - Off Delay Time
24
tf
Fall Time
28
Qg Total Gate Charge
8.5
Qgs GateâSource Charge
1.3
Qgd GateâDrain Charge
4.1
Is Continuous Source Current
VSD
Rth j-c
Diode Forward Voltage
Thermal Resistance
Junction-to-Case
*Pulse Test Pulse Width 300 s Duty Cycle 2%
Max Unit
Test Conditions
V ID=250 A ,VGS=0V
VDS =600V VGS=0
100
VGS= 30V , VDS =0V
4.0 V VDS = VGS , ID =250 A
VGS=10V, ID =1.0A
S VDS = 40V , ID =1.0A *
pF
25 pF
3 pF
28 nS
60 nS
58 nS
66 nS
12 nC
VDS =25V, VGS=0,f=1
VDD =300V,
ID =2A ( )
RG= 25
VDS =480V
nC
nC
IS =2.0A , VGS=0
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