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HFF11N60S Datasheet, PDF (1/7 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – N-Channel Enhancement Mode Field Effect Transistor | |||
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Shantou Huashan Electronic Devices Co., Ltd.
HFF11N60S
N-Channel Enhancement Mode Field Effect Transistor
â General Description
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, this advanced technology has been
especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation
mode . These devices are well suited for high efficiency switch mode power supply,
power factor correction, electronic lamp ballast based on half bridge.
â Features
⢠10.8A, 600V(See Note), RDS(on) <0.75â¦@VGS = 10 V
⢠Fast switching
⢠100% avalanche tested
⢠Improved dv/dt capability
⢠RoHS compliant
â Maximum Ratingsï¼Ta=25â unless otherwise specifiedï¼
TO-220F
1
1- G 2-D 3-S
TstgââStorage Temperature ------------------------------------------------------ -55~150â
Tj ââOperating Junction Temperature -------------------------------------------------- 150â
VDSS ââ Drain-Source Voltage ----------------------------------------------------------600V
VGSS ââ Gate-Source Voltage --------------------------------------------------------------------------- ±30V
ID ââ Drain Current (Continuous)(Tc=25â)--------------------------------------------------------- 10.8A
IDM ââ Pulsed Drain Current (Note 1)----------------------------------------------------------------- 32.4A
PD ââ Maximum Power Dissipation (Tc=25â)------------------------------------------------------ 32.1W
Derate Above 25â ------------------------------------------------------------------------- 0.26W/â
EASââ Pulsed Avalanche Energy (Note 2) --------------------------------------------------------- 201.7mJ
IARââ Avalanche Current (Note 1) ----------------------------------------------------------------------- 3.7A
EAR ââ Repetitive Avalanche Energy (Note 1) ----------------------------------------------------- 0.94mJ
dv/dt ââ Peak Diode Recovery dv/dt (Note 3) ------------------------------------------------------20V/ns
â Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TO-220F
Max 3.9
Max 62.5
Unit
â/W
â/W
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