HEP42C Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R A N S I S T O R
HEP42C
APPLICATIONS
Medium Power Linear Switching Application.
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
-55~150
T_j Junction Temperature
P_C Collector Dissipation T_c=25
P_C Collector Dissipation T_A=25
V_CBO Collector-Base Voltage
150
65W
2W
-100V
V_CEO Collector-Emitter Voltage
-100 V
V_EBO Emitter- Base Voltage
-5V
I_C Collector Current
-6A
I_B Base Current
-2A
TO-220AB
1 Base B
2 Collector C
3 Emitter E
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ Max
BVCEO
ICEO
IEBO
ICES
HFE 1
HFE 2
VCE(sat)
VBE(on)
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector Cut-off Current
DC Current Gain
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter On Voltage
fT
Current Gain-Bandwidth Product
hFE 2 Classification
Unit
Test Conditions
I_C=-30mA, I_B=0
V_CE=-60V, I_B=0
V_EB=-5V, I_C=0
V_CE=-100V, V_EB=0
V_CE=-4V, I_C=- A
V_CE=-4V, I_C=-3A
I_C=-6A, I_B=-600mA
V_CE=-4V, I_C=-6A
V_CE=-10V, I_C=-500mA,
f=1
15 75
70 100