HEP41C Datasheet, PDF(1/2 Page) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

HEP41C Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.

NPN S I L I C O N T R A N S I S T O R

HEP41C

APPLICATIONS

Medium Power Linear Switching Application.

ABSOLUTE MAXIMUM RATINGS Ta=25

Tstg Storage Temperature

-55~150

Tj Junction Temperature

PC Collector Dissipation Tc=25

PC Collector Dissipation TA=25

VCBO Collector-Base Voltage

150

65W

1 00 V

VCEO Collector-Emitter Voltage

1 00 V

VEBO Emitter - Base Voltage

IC Collector Current

IB Base Current

TO-220AB

1 Base B

2 Collector C

3 Emitter E

ELECTRICAL CHARACTERISTICS Ta=25

Symbol

Characteristics

BVCEO

ICEO

IEBO

ICES

HFE 1

HFE 2

VCE(sat)

VBE(on)

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

Collector Cut-off Current

DC Current Gain

Collector- Emitter Saturation Voltage

Base-Emitter On Voltage

Current Gain-Bandwidth Product

Min Typ

Max Unit

Test Conditions

IC=30mA, IB=0

VCE=60V, IB=0

VEB=5V, IC=0

VCE=100V, VEB=0

VCE=4V, IC= A

VCE=4V, IC=3A

IC=6A, IB=600mA

VCE=4V, IC=6A

VCE=10V, IC=500mA, f=1

▷