HEP32 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R A N S I S T O R
HEP32 Series
HEP32/HEP32A/HEP32B/HEP32C
APPLICATIONS
Mediu Power Linear switching Applications.
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
-55~150
T_j Junction Temperature
150
P_C Collector Dissipation Tc=25
40W
P_C Collector Dissipation Ta=25
V_CBO Collector-Base Voltage V_CEO
2W
Collector-Emitter Voltage
HEP32
-40V
HEP32A
-60V
HEP32B
-80V
HEP32C
-100V
V_EBO Emitter - Base Voltage
-5V
I_C ^IC CoClleocllteocrtCoruCrruenrrtentDCDC
I_C Collector Current Pulse
-3m-A3A
-5A
Ib Base Current
-1A
TO-220AB
1 Base B
2 Collector C
3 Emitter E
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ Max Unit Test Conditions
BVCEO
ICEO
ICES
HFE 1
HFE 2
VCE(sat)
VBE(ON)
IEBO
Collector-Emitter Breakdown Voltage HEP32
HEP32A
HEP32B
HEP32C
Collector Cut-off Current HEP31/ HEP32A
HEP31B/ HEP32C
Collector Cut-off Current
HEP32
HEP32A
HEP32B
HEP32C
*DC Current Gain
*Collector- Emitter Saturation Voltage
*Base-Emitter On Voltage
Emitter Cut-off Current
fT
Current Gain-Bandwidth Product
I_C=-30mA, I_B=0
V_CB=-30V, I_B=0
V_CB=-60V, I_B=0
V_CE=-40V, V_EB=0
V_CE=-60V, V_EB=0
V_CE=-80V, V_EB=0
V_CE=-100V, V_EB=0
V_CE=-4V, I_C=-1A
V_CE=-4V, I_C=-3A
I_C=-3A, I_B=-375mA
V_CE=-4V, I_C=-3A
V_EB=-5V, I_C=0
V_CE=-10V,
I_C=-500mA
*Pulse Test PW 300
2%