HEP31 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HEP31 Series
HEP31/HEP31A/HEP31B/HEP31C
APPLICATIONS
Mediu Power Linear switching Applications.
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
-55~150
T_j Junction Temperature
150
P_C Collector Dissipation Tc=25
40W
P_C Collector Dissipation Ta=25
V_CBO Collector-Base Voltage V_CEO
2W
Collector-Emitter Voltage
HEP31
40V
HEP31A
60V
HEP31B
80V
HEP31C
100V
V_EBO Emitter - Base Voltage
5V
I_C Collector Current DC
3A
I_C Collector Current Pulse
5A
Ib Base Current
1A
TO-220AB
1 Base B
2 Collector C
3 Emitter E
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ Max Unit Test Conditions
BVCEO
ICEO
ICES
HFE 1
HFE 2
VCE(sat)
VBE(ON)
IEBO
Collector-Emitter Breakdown Voltage HEP31
HEP31A
HEP31B
HEP31C
Collector Cut-off Current HEP31/ HEP31A
HEP31B/ HEP31C
Collector Cut-off Current
HEP31
HEP31A
HEP31B
HEP31C
*DC Current Gain
*Collector- Emitter Saturation Voltage
*Base-Emitter On Voltage
Emitter Cut-off Current
fT
Current Gain-Bandwidth Product
I_C=30mA, I_B=0
V_CB=30V, I_B=0
V_CB=60V, I_B=0
V_CE=40V, V_EB=0
V_CE=60V, V_EB=0
V_CE=80V, V_EB=0
V_CE=100V, V_EB=0
V_CE=4V, I_C=1A
V_CE=4V, I_C=3A
I_C=3A, I_B=375mA
V_CE=4V, I_C=3A
V_EB=5V, I_C=0
V_CE=10V,
I_C=500mA
*Pulse Test PW 300
2%