HED880 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
APPLICATIONS
Low Frequency Power Amplifier.
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
T_j Junction Temperature
P_C Collector Dissipation T_c=25
V_CBO Collector-Base Voltage
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C Collector Current
Ib Base Current
55~150
150
30W
60V
60V
7V
3A
0.3A
N PN S I L I C O N T R A N S I S T O R
HED880
TO-220AB
1 Base B
2 Collector C
3 Emitter, E
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCEO
ICBO
IEBO
HFE 1
HFE 2
VCE(sat)
VBE(on)
ft
Cob
tON
tSTG
tF
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product
Output Capacitance
Turn-On Time
Storage Time
Fall Time
I_C=50mA, I_B=0
V_CB=60V, I_E=0
V_EB=7V, I_C=0
V_CE=5V, I_C=0.5A
V_CE=5V, I_C=3A
I_C=3A, I_B=0.3A
V_CE=5V, I_C=0.5A
V_CE=5V, I_C=0.5A,
V_CB=10V, I_E=0 f=1
I_B1= -I_B2=0.2A
V_CC=30V
hFE Classification
O
Y
GR