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| HE3055 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
HE3055
GENERAL PURPOSE AND SWITCHING APPLICATIONS
DCCURRENT GAIN SPECIFIED TO 10 AMPERES
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
-55~150
Tj Junction Temperature
150
PC Collector Dissipation Tc=25
75W
PC Collector Dissipation TA=25
0.6W
VCBO Collector-Base Voltage
70V
VCEO Collector-Emitter Voltage
60V
VEBO Emitter-Base Voltage
5V
IC Collector Current DC
10A
IB Base Current
6A
TO-220
1 Base B
2 Collector C
3 Emitter, E
Ta=25
Symbol
Characteristics
Min Typ Max Unit
BVCEO
Collector-Emitter Sustaining Voltage
60
V
ICEO
Collector Cutoff Current
0.7 mA
IEBO
Emitter-Base Cutoff Current
5 mA
HFE 1
DC Current Gain
20
100
HFE 2
5
VCE(sat1) Collector- Emitter Saturation Voltage
1.1 V
VCE(sat2)
8
V
VBE(on) Base- Emitter Saturation Voltage
1.8 V
fT
Current Gain-Bandwidth Product 2.0
Test Conditions
IC=10mA, IB=0
VCE=30V, IB=0
VEB=5V, IC=0
VCE=4V, IC=4A
VCE=4V, IC=10A
IC=4A, IB=400mA
IC=10A, IB=3.3mA
VCE=4V, IC=4A
VCE=10V, IC=500mA
f=500KHz
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