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| HE2955 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
HE2955
GENERAL PURPOSE AND SWITCHING APPLICATIONS
DCCURRENT GAIN SPECIFIED TO 10 AMPERES
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
-55~150
Tj Junction Temperature
150
PC Collector Dissipation Tc=25
-75W
PC Collector Dissipation TA=25
0.6W
VCBO Collector-Base Voltage
-70V
VCEO Collector-Emitter Voltage
-60V
VEBO Emitter-Base Voltage
-5V
IC Collector Current DC
-10A
IB Base Current
-6A
TO-220
1 Base B
2 Collector C
3 Emitter, E
Ta=25
Symbol
Characteristics
Min
BVCEO
Collector-Emitter Sustaining Voltage
-60
ICEO
Collector Cutoff Current
IEBO
HFE 1
HFE 2
Emitter-Base Cutoff Current
DC Current Gain
20
5
VCE(sat1) Collector- Emitter Saturation Voltage
VCE(sat2)
VBE(on) Base- Emitter Saturation Voltage
fT
Current Gain-Bandwidth Product 2.0
Typ Max Unit
V
-0.7 mA
-5 mA
100
-1.1 V
-8 V
-1.8 V
Test Conditions
IC=-10mA, IB=0
VCE=-30V, IB=0
VEB=-5V, IC=0
VCE=-4V, IC=-4A
VCE=-4V, IC=-10A
IC=-4A, IB=-400mA
IC=-10A, IB=-3.3mA
VCE=-4V, IC=-4A
VCE=-10V, IC=-500mA
f=500KHz
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