HE13003 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
HE13003
HIGH VOLTAGE SWITCH MODE APPLICICATIONS
High Speed Switching
Suitable for Switching Regulator and Montor Control
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
-65~150
T_j Junction Temperature
150
P_C Collector Dissipation T_c=25
50W
V_CBO Collector-Base Voltage
700V
V_CEO Collector-Emitter Voltage
400V
V_EBO Emitter-Base Voltage
9V
I_C Collector Current DC
1.5A
I_B Base Current
0.75A
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
BVCEO
IEBO
HFE 1
HFE 2
VCE(sat)1
VCE(sat)2
VCE(sat)3
VBE(sat)1
VBE(sat)2
fT
tON
tSTG
tF
Characteristics
Collector-Emitter Breakdown Voltage
Emitter-Base Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Turn On Time
Storage Time
Fall Time
Min Typ
400
10
5
5
hFE Classification
TO-220
1 Base B
2 Collector C
3 Emitter, E
Max Unit
Test Conditions
V I_C=5mA, IB=0
10
A V_EB=9V, I_C=0
40
V_CE=5V, I_C=0.5A
V_CE=2V, I_C=1A
0.5 V I_C=0.5A, I_B=0.1A
1 V I_C=1A, I_B=0.25A
3 V I_C=1.5A, I_B=0.5A
1 V I_C=0.5A, IB=100mA
1.2 V I_C=1A, I_B=0.25A
MHz VCE=10V,IC=0.1A,f=1MHz
1.1 s
V_CC=125V, I_C=1A,
4.0
s I_B1=0.2A,I_B2=-0.2A
0.7 s RL=125
H1
10-16
H2
14-21
H3
19-26
H4
24-31
H5
29-40