HE13002 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
HE13002
APPLICATIONS
High Voltage switching And Speed Switching
ABSOLUTE MAXIMUM RATINGS T_a=25
TO-92
T_stg Storage Temperature
-55~150
T_j Junction Temperature
150
P_C Collector Dissipation
V_CBO Collector-Base Voltage
V_CEO Collector-Emitter Voltage
V_EBO Emitter - Base Voltage
1W
600V
400V
9V
1 Emitter E
Collector C
Base B
I_C Collector Current
1A
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE
VCE(sat 1)
VCE(sat2)
VCE(sat3)
VBE(sat)
fT
tON
tSTG
tF
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter-Base Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Collector- Emitter Saturation Voltage
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Turn-On Time
Storage Time
Fall Time
Min Typ Max Unit
Test Conditions
I_C=1mA, IE=0
I_C=10mA, IB=0
I_E=1mA I_C=0
V_CB=500V, I_E=0
V_EB=9V, I_C=0
V_CE=10V, I_C=0.1A
I_C=0.2A, I_B=40mA
I_C=0.5A, I_B=100mA
I_C=0.8A, I_B=200mA
I_C=0.5A, IB=100mA
V_CE=10V, I_C=0.1A,f=1
V_CC=125V, I_C=1A
I_B1=-I_B2=0.2A
R_L=125
hFE Classification