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| HE13001 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
HE13001
HIGH VOLTAGE SWITCH MODE APPLICICATIONS
High Speed Switching
Suitable for Switching Regulator and Montor Control
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
Tj Junction Temperature
PC Collector Dissipation
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC Collector Current
-55~150
150
900mW
600V
400V
9V
0.25A
TO-92
1 Emitter E
2 Collector C
3 Base B
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE
VCE(sat)
VBE(sat)
fT
Characteristics
Min Typ
Collector-Base Breakdown Voltage
600
Collector-Emitter Breakdown Voltage
400
Emitter-Base Breakdown Voltage
9
Collector Cut-off Current
Emitter-Base Cut-off Current
DC Current Gain
8
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
8
Max Unit
Test Conditions
V IC=1mA, IE=0
V IC=10mA, IB=0
V IE=1mA IC=0
100
A VCB=500V, IE=0
100
A VEB=9V, IC=0
70
VCE=10V, IC=20mA
0.6 V IC=100mA, IB=20mA
1.2 V IC=100mA, IB=20mA
MHz VCE=10V, IC=20mA
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