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HD965 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – NPN SILICON TRANSISTOR
Shantou Huashan Electronic Devices Co.,Ltd.
N PN S I L I C O N T R A N S I S T O R
HD965
LOW FREQUENCY AMPLIFIER APPLICATIONS.
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
Tj Junction Temperature
PC Collector Dissipation
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter - Base Voltage
IC IC
Collector Current
Collector Current
-55~150
150
0.75W
40V
20V
7V
300mA
5A
TO-92
1 Emitter E
2 Collector C
3 Base B
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
Characteristics
Min Typ
BVCEO
BVEBO
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
ICBO
IEBO
HFE 1
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
HFE 2
VCE(sat)
fT
Cob
DC Current Gain
Collector- Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance
Max Unit
Test Conditions
IC=1mA, IB=0
IE=10 A IC=0
VCB=10V, IE=0
VEB=7V, IC=0
VCE=2V, IC=0.5A
VCE=2V, IC=2A
IC=3A, IB=0.1A
VCE=6V, IC=50mA
VCB=20V, IE=0 f=1