HD880 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
N PN S I L I C O N T R A N S I S T O R
HD880
█ APPLICATIONS
Low Frequency Power Amplifier.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature……………………………… 150℃
P_C——Collector Dissipation（T_c=25℃）…………………… 30W
V_CBO——Collector-Base Voltage……………………………60V
V_CEO——Collector-Emitter Voltage………………………… 60V
V_EBO——Emitter-Base Voltage……………………………… 7V
I_C——Collector Current……………………………………… 3A
Ib——Base Current………………………………………0.3A
TO-220
1―Base，B
2―Collector，C
3―Emitter, E
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCEO Collector-Emitter Breakdown Voltage
60
ICBO Collector Cut-off Current
IEBO Emitter Cut-off Current
HFE（1） DC Current Gain
60
HFE（2） DC Current Gain
20
VCE(sat) Collector- Emitter Saturation Voltage
VBE(on) Base-Emitter On Voltage
ft
Current Gain-Bandwidth Product
Cob Output Capacitance
tON Turn-On Time
tSTG Storage Time
tF Fall Time
V I_C=50mA, I_B=0
100 μA V_CB=60V, I_E=0
100 μA V_EB=7V, I_C=0
300
V_CE=5V, I_C=0.5A
V_CE=5V, I_C=3A
0.4 1 V I_C=3A, I_B=0.3A
0.7 1 V V_CE=5V, I_C=0.5A
3
MHz V_CE=5V, I_C=0.5A,
70
pF V_CB=10V, I_E=0，f=1MHz
0.8
μS
1.5
μS
I_B1= -I_B2=0.2A
V_CC=30V
0.8
μS
█ hFE Classification
O
60—120
Y
100—200
GR
150—300