HC8550 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
HC8550
█ PNP EPITAXIAL SILICON TRANSISTOR
2W OUTPUT AMPLIFIER PORTABLE RADIO IN CLASS
B PUSH-PULL OPERATION.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………1W
V_CBO——Collector-Base Voltage………………………………-40V
V_CEO——Collector-Emitter Voltage……………………………-25V
V_EBO——Emitter-Base Voltage………………………………-6V
I_C——Collector Current………………………………………-1.5A
TO-92
1―Emitter，E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
ICBO
IEBO
HFE
Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
VBE
Base- Emitter Voltage
VCE(sat） Collector- Emitter Saturation Voltage
VBE(sat) Base- Emitter Saturation Voltage
BVCBO Collector-Base Breakdown Voltage
BVCEO Collector-Emitter Breakdown Voltage
BVEBO Emitter- Base Breakdown Voltage
fT
Current Gain-Bandwidth Product
Min Typ Max Unit
Test Conditions
-0.1 μA VCB=-35V, IE=0
-0.1 μA VEB=-6V, IC=0
85
500
VCE=-1V, IC=-100mA
40
VCE=-1V, IC=-800mA
-1
V VCE=-1V, IC=-10mA
-0.5 V IC=-800mA, IB=-80mA
-1.2 V IC=-800mA,IB=-80mA
-40
V IC=-100μA，IE=0
-25
V IC=-2mA，IB=0
-6
V IE=-100μA，IC=0
100
MHz VCE=-10V, IC=-50mA
█ hFE Classification
B
85—160
C
120—200
D
160—300
E
270—500