HC8050S Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HC8050S
█ APPLICATIONS
Audio Frequency Amplifier.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Juncttion Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………625W
V_CBO——Collector-Base Voltage………………………………40V
V_CEO——Collector-Emitter Voltage……………………………20V
V_EBO——Emitter-Base Voltage………………………………5V
I_C——Collector Current………………………………………500mA
TO-92
1―Emitter，E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
ICBO Collector Cut-off Current
IEBO Emitter Cut-off Current
HFE（1） DC Current Gain
HFE（2）
VCE(sat） Collector- Emitter Saturation Voltage
VBE(sat) Base- Emitter Saturation Voltage
VBE(on) Base-Emitter On Voltage
BVCBO Collector-Base Breakdown Voltage
BVCEO Collector-Emitter Breakdown Voltage
BVEBO Emitter- Base Breakdown Voltage
█ hFE Classification
Min Typ Max Unit
Test Conditions
0.1 μA VCB=25V, IE=0
0.1 μA VEB=3V, IC=0
85
500
VCE=1V, IC=50mA
40
VCE=1V, IC=500mA
0.6 V IC=500mA, IB=50mA
1.2 V IC=500mA,IB=50mA
0.6
0.73 V V_CE=1V, I_C=10mA
40
V IC=100μA，IE=0
20
V IC=2mA，IB=0
5
V IE=100μA，IC=0
B
85—160
C
120—200
D
160—300
E
270—500