HC5039 Datasheet, PDF (1/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HC5039
APPLICATIONS
high Voltage power switch switching Application.
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
- 65 ~ 1 5 0
T_j Junction Temperature
150
P_C Collector Dissipation Tc=25
70W
V_CBO Collector-Base Voltage
80 0 V
V_CEO Collector-Emitter Voltage
40 0 V
V_EBO Emitter - Base Voltage
7V
I_C Collector Current DC
5A
I_CP Collector Current Pulse
10A
Ib Base Current
3A
TO-220
1 Base B
2 Collector C
3 Emitter E
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
BVCBO
BVCEO
BVEBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
ICBO Collector Cut-off Current
IEBO Emitter Cut-off Current
HFE *DC Current Gain
VCE(sat)
VBE(sat)
fT
*Collector- Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Cob Output Capacitance
tON Turn On Time
tSTG Storage Time
tF Fall Time
Min Typ Max Unit
Test Conditions
I_C=1mA, I_E=0
I_C=5mA, I_B=0
I_E=1mA I_C=0
V_CB=500V, I_E=0
V_EB=7V, I_C=0
V_CE=5V, I_C=0.3A
I_C=2.5A, I_B=0.5A
I_C=2.5A, I_B=0.5A
V_CE=5V, I_C=0.1A
V_CB=10V, f=1
Vcc=150V Ic=2.5A
Ib1=-Ib2=0.5A RL=60
*Pulse Test PW 300
2% Pulse