HC5027H Datasheet, PDF (1/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HC5027H
APPLICATIONS
High Voltage And High Reliability .
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
-55~150
T_j Junction Temperature
150
P_C Collector Dissipation Tc=25
65W
V_CBO Collector-Base Voltage
1100V
V_CEO Collector-Emitter Voltage
80 0 V
V_EBO Emitter- Base Voltage
7V
I_C Collector Current DC
3A
I_CP Collector Current Pulse
10A
Ib Base Current
1.5A
TO-3P
1 Base B
2 Collector C
3 Emitter E
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE 1
HFE 2
VCE(sat)
VBE(sat)
fT
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance
I_C=1mA, I_E=0
I_C=5mA, I_B=0
I_E=1mA I_C=0
V_CB=800V, I_E=0
V_EB=5V, I_C=0
V_CE=5V, I_C=0.2A
V_CE=5V, I_C=1A
I_C=1.5A, I_B=0.3A
I_C=1.5A, I_B=0.3A
V_CE=10V,I_C=0.2A
V_CB=10V, I_E=0 f=1
hFE Classification
N
R
O