HC5027 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HC5027
█ APPLICATIONS
High Voltage And High Reliability .
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation（Tc=25℃）……………………………50W
V_CBO——Collector-Base Voltage………………………………1100V
V_CEO——Collector-Emitter Voltage……………………………800V
V_EBO——Emitter-Base Voltage………………………………………7V
I_C——Collector Current（DC）………………………………………3A
I_CP——Collector Curren（t Pulse）……………………………………10A
Ib——Base Current………………………………………………1.5A
TO-220
1―Base，B
2―Collector，C
3―Emitter，E
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage 1100
BVCEO Collector-Emitter Breakdown Voltage 800
BVEBO Emitter-Base Breakdown Voltage
7
ICBO Collector Cut-off Current
IEBO Emitter Cut-off Current
HFE（1） DC Current Gain
10
HFE（2） DC Current Gain
8
VCE(sat) Collector- Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
fT Current Gain-Bandwidth Product
15
Cob Output Capacitance
60
V I_C=1mA, I_E=0
V I_C=5mA, I_B=0
V I_E=1mA，I_C=0
10 μA V_CB=800V, I_E=0
10 μA V_EB=5V, I_C=0
40
V_CE=5V, I_C=0.2A
V_CE=5V, I_C=1A
2
V I_C=1.5A, I_B=0.3A
1.5 V I_C=1.5A, I_B=0.3A
MHz V_CE=10V,I_C=0.2A
pF V_CB=10V, I_E=0，f=1MHz
█ hFE Classification
N
10—20
R
15—30
O
20—40