HC4242S Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HC4242S
APPLICATIONS
high Voltage high-Speed Switching.
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
T_j Junction Temperature
P_C Collector Dissipation Tc=25
V_CBO Collector-Base Voltage
V_CEO Collector-Emitter Voltage
V_EBO Emitter - Base Voltage
I_C Collector Current DC
I_C Collector Current Pulse
Ib Base Current
-55~150
150
75W
70 0 V
40 0 V
9V
4A
8A
2mA
TO-220
1 Base B
2 Collector C
3 Emitter E
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCEO Collector-Emitter Breakdown Voltage
IEBO Emitter Cut-off Current
HFE 1 DC Current Gain
HFE 2
VCE(sat1) Collector- Emitter Saturation Voltage
VCE(sat2) Collector- Emitter Saturation Voltage
VCE(sat3) Collector- Emitter Saturation Voltage
VBE(sat1) Base-Emitter Saturation Voltage
VBE(sat2) Base-Emitter Saturation Voltage
Cob Output Capacitance
fT Current Gain-Bandwidth Product
tON Turn-On Time
tSTG Storage Time
tR Rise Time
I_C=10mA, I_B=0
V_EB=9V, I_C=0
V_CE=5V, I_C=1A
V_CE=5V, I_C=2A
I_C=1A, I_B=0.2A
I_C=2A, I_B=0.5A
I_C=4A, I_B=1A
I_C=1A, I_B=0.2A
I_C=2A, I_B=0.5A
V_CB=10V, I_E=0 f=0.1
V_CE=10V, I_C=0.5A
Vcc=125V I_C=2A
I_B1= I_B2=0.4A
hFE Classification
H1
H2
H3
H4
H5