HC4106 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HC4106
█ APPLICATIONS
High Breakdown Voltage And High Reliability.Fast Switching Speed.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation（Tc=25℃）……………………………50W
V_CBO——Collector-Base Voltage………………………………500V
V_CEO——Collector-Emitter Voltage……………………………400V
V_EBO——Emitter-Base Voltage………………………………………7V
I_C——Collector Current………………………………………………7A
Ib——Base Current………………………………………………3A
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
TO-220
1―Base，B
2―Collector，C
3―Emitter，E
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage 500
V I_C=1mA, I_E=0
BVCEO Collector-Emitter Breakdown Voltage 400
V I_C=5mA, I_B=0
BVEBO Emitter-Base Breakdown Voltage
7
V I_E=1mA，I_C=0
ICBO Collector Cut-off Current
10 μA V_CB=400V, I_E=0
IEBO Emitter Cut-off Current
10 μA V_EB=5V, I_C=0
HFE（1） DC Current Gain
15
50
V_CE=5V, I_C=0.8A
HFE（2） DC Current Gain
10
V_CE=5V, I_C=4A
HFE（3） DC Current Gain
10
V_CE=5V, I_C=10mA
VCE(sat) Collector- Emitter Saturation Voltage
0.8 V I_C=4A, I_B=0.8A
VBE(sat) Base-Emitter Saturation Voltage
1.5 V I_C=4A, I_B=0.8A
fT Current Gain-Bandwidth Product
20
MHz V_CE=10V,I_C=0.8A
Cob Output Capacitance
80
pF V_CB=10V, I_E=0，f=1MHz
tON Turn-On Time
0.5 ^μS
V_CC=10V,I_C=5A
tSTG Storage Time
2.5 μS
I_B1=1A，I_B2=-2A
tF Fall Time
0.3 μS RL=40ohms
█ hFE Classification
L
15—30
M
20—40
N
30—50