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| HC4054 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
APPLICATIONS
Switching Power .
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
Tj Junction Temperature
PC Collector Dissipation Tc=25
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC Collector Current
IB Base Current
65~150
150
30W
600V
450V
7V
5A
2A
NPN DARLINGTON TRANSISTOR
HC4054
TO-220
1 Base B
2 Collector C
3 Emitter, E
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
Characteristics
Min Typ
BVCEO(SUS) Collector-Emitter Sustaining Voltage
ICBO
Collector Cutoff Current
IEBO
ICEO
HFE 1
Emitter-Base Cutoff Current
Collector Cutoff Current
DC Current Gain
HFE 2
VCE(sat1)
VBE(sat)
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
fT
Current Gain-Bandwidth Product
20
tON
Turn-On Time
tSTG
Storage Time
tF
Fall Time
Max Unit
Test Conditions
MHz
IC=100mA, IB=0
VCB=600V, IE=0
VEB=7V, IC=0
VCE=450V, IB=0
VCE=5V, IC=2.5A
VCE=5V, IC=1mA
IC=2.5A, IB=0.5A
IC=2.5mA, IB=0.5A
VCE=10V Ic=0.5A,
Ic=2.5A,
IB1=0.5A IB2=1A
VBB2=4V,RL=60
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