HC2344 Datasheet, PDF (1/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N TRANSISTOR
HC2344
█ APPLICATIONS
High Voltage switching，AF Power Amp.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature……………………………… 150℃
P_C——Collector Dissipation（T_c=25℃）…………………… 25W
V_CBO——Collector-Base Voltage………………………… 180V
V_CEO——Collector-Emitter Voltage……………………… 160V
V_EBO——Emitter-Base Voltage…………………………………6V
I_C——Collector Current（DC）……………………………… 1.5A
I_CP——Collector Current（Pulse）……………………………3A
TO-220
1―Base，B
2―Collector，C
3―Emitter, E
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
180
BVCEO Collector-Emitter Breakdown Voltage 160
BVEBO Emitter-Base Breakdown Voltage
6
ICBO Collector Cutoff Current
IEBO Emitter-Base Cutoff Current
HFE DC Current Gain
60
VCE(sat) Collector- Emitter Saturation Voltage
0.3
VBE Base- Emitter Voltage
Cob Output Capacitance
23
fT Current Gain-Bandwidth Product
100
ton Turn-On Time
0.15
tf Fall Time
0.48
tstg Storage Time
0.81
V I_C=1mA, I_E=0
V I_C=1mA, I_B=0
V I_E=1mA，I_C=0
10 μA V_CB=120V, I_E=0
10 μA V_EB=4V, I_C=0
200
V_CE=5V, I_C=300mA
1.0 V I_C=500mA, I_B=50mA
1.5 V V_CE=5V,I_C=10A
pF V_CB=10V, f=1MHz
MHz V_CE=10V,I_C=50mA，
μS
μS See specified test circuit
μS
█ hFE Classification
D
60—120
E
100—200