HC2073 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HC2073
█ APPLICATIONS
TV Vertical Deflection Output .
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation（Tc=25℃）……………………………25W
V_CBO——Collector-Base Voltage………………………………150V
V_CEO——Collector-Emitter Voltage……………………………150V
V_EBO——Emitter-Base Voltage………………………………5V
I_C——Collector Current……………………………………………1.5A
TO-220
1―Base，B
2―Collector，C
3―Emitter，E
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
150
V I_C=500μA, I_E=0
BVCEO Collector-Emitter Breakdown Voltage 150
V I_C=10mA, I_B=0
BVEBO Emitter-Base Breakdown Voltage
5
V I_E=500μA，I_C=0
HFE DC Current Gain
40 75 140
V_CE=10V, I_C=500mA
VCE(sat) Collector- Emitter Saturation Voltage
1
V I_C=500mA, I_B=50mA
ICBO Collector Cut-off Current
10 μA V_CB=120V, I_E=0
IEBO Emitter Cut-off Current
10 μA V_EB=5V, I_C=0
fT Current Gain-Bandwidth Product
4
MHz V_CE=10V,I_C=500mA
Cob Output Capacitance
50
pF V_CB=10V, I_E=0,f=1MHz