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| HC143X Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
NPN DIGITAL T R A N S I S T O R
HC143X
APPLICATIONS
Switching Circuit Interface Circuit
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
Tj Junction Temperature
PC Collector Dissipation
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter - Base Voltage
IC Collector Current
-55~150
150
300mW
50V
50V
5V
100mA
TO-92S
1 Emitter E
2 Collector,C
3 Base B
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO
BVCEO
ICBO
ICEO
IEBO
HFE
VCE(sat)
R1
R1/R2
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Input Off Voltage
Input On Voltage
Input Resistor
Resistance Ratio
IC=10 A, IE=0
IC=0.1mA, IB=0
A VCB=40V, IE=0
A VCE=40V, IB=0
A VEB=5V, IC=0
VCE=5V, IC=1mA
IC=10mA, IB=0.5mA
VCE=5V, IC=0.1mA
VCE=0.3V, IC=20mA
fT Current Gain-Bandwidth Product
VCE=10V,IC=5mA
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