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| HC143T Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
NPN DIGITAL T R A N S I S T O R
HC143T
APPLICATIONS
Switching Circuit Interface Circuit
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
Tj J unction Temperature
PC Collector Dissipation
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter - Base Voltage
IC Collector Current
-55~150
150
300mW
50V
50V
5V
100mA
TO-92S
1 Emitter E
2 Collector,C
3 Base B
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE
VCE(sat)
R1
fT
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Input Off Voltage
Input On Voltage
Input Resistor
Current Gain-Bandwidth Product
Output Capacitance
IC=10 A, IE=0
IC=0.1mA, IB=0
IE=50 A IC=0
A VCB=40V, IE=0
A VEB=5V, IC=0
VCE=5V, IC=1mA
IC=10mA, IB=0.5mA
VCE=5V, IC=0.1mA
VCE=0.2V, IC=10mA
VCE=10V,IC=5mA
VCB=10V,f=1
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