 English |
|
|
|
|
|
|
|
| HC114E Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR | |||
| |||
|
Shantou Huashan Electronic Devices Co.,Ltd.
NPN DIGITAL TRANSISTOR
HC114E
APPLICATIONS
Switching Circuit Interface Circuit
ABSOLUTE MAXIMUM RATINGS Ta=25
TO-92S
Tstg Storage Temperature
-55~150
Tj Junction Temperature
150
PC Collector Dissipation
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
300mW
50V
50V
1 Emitter E
2 Collector C
3 Base B
VEBO Emitter - Base Voltage
10V
IC Collector Current
-1 00 m A
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
BVCBO
BVCEO
ICBO
ICEO
IEBO
HFE
VCE(sat)
R1
R2/R1
fT
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Current Gain-Bandwidth Product
Min Typ Max Unit
Test Conditions
IC=10 A, IE=0
IC=0.1mA, IB=0
VCB=40V, IE=0
VCE=40V, IB=0
VEB=5V, IC=0
VCE=5V, IC=5mA
IC=10mA, IB=0.5mA
VCE=5V, IC=0.1mA
VCE=0.2V, IC=10mA
VCE=-10V, IC=-5mA
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese