HC1061 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
N PN S I L I C O N T R A N S I S T O R
HC1061
█ APPLICATIONS
Low Frequency Power Amplifier.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -65~150℃
T_j——Junction Temperature……………………………… 150℃
P_C——Collector Dissipation（T_c=25℃）…………………… 25W
V_CBO——Collector-Base Voltage……………………………50V
V_CEO——Collector-Emitter Voltage………………………… 50V
V_EBO——Emitter-Base Voltage……………………………… 4V
I_C——Collector Current…………………………………… 3.0A
I_CM——Collector Curren（t Peak）……………………………… 8A
Ib——Base Current……………………………………………0.5A
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
TO-220
1―Base，B
2―Collector，C
3―Emitter, E
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCEO Collector-Emitter Breakdown Voltage
50
BVCBO Collector-Base Breakdown Voltage 50
BVEBO Emitter-Base Breakdown Voltage
4
ICBO Collector Cut-off Current
IEBO Emitter Cut-off Current
HFE（1） DC Current Gain
35
HFE（2） DC Current Gain
35
VCE(sat) Collector- Emitter Saturation Voltage
VBE(on) Base-Emitter On Voltage
ft
Current Gain-Bandwidth Product
5.0
V I_C=50mA, I_B=0
V I_C=5mA, I_E=0
V I_E=5mA，I_C=0
100 μA V_CB=25V, I_E=0
100 μA V_EB=4V, I_C=0
320
V_CE=4V, I_C=1A
V_CE=4V, I_C=0.1A
1.0 V I_C=2A, I_B=0.2A
1.5 V V_CE=4V, I_C=1A
MHz V_CE=4V, I_C=0.5A, f=1MHz
█ hFE Classification
A
35—70
B
60—120
C
100—200
D
160—320