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HBU407H Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HBU407H
â APPLICATIONS
High Voltage Swltching .
â ABSOLUTE MAXIMUM RATINGSï¼Ta=25âï¼
TstgââStorage Temperatureâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ -55~150â
TjââJunction Temperatureâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦150â
PCââCollector Dissipationï¼Tc=25âï¼â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦60W
VCBOââCollector-Base Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦330V
VCEOââCollector-Emitter Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦150V
VEBOââEmitter-Base Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦6V
ICââCollector Currentï¼DCï¼â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦7A
ICPââCollector Currenï¼t Pulseï¼â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦10A
IbââBase Currentâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦4A
TO-220
1âBaseï¼B
2âCollectorï¼C
3âEmitterï¼E
â ELECTRICAL CHARACTERISTICSï¼Ta=25âï¼
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
ICESï¼1ï¼ Collector Cut-off Current
ICESï¼2ï¼
ICESï¼3ï¼
IEBO Emitter Cut-off Current
HFE DC Current Gain
10
VCE(sat) Collector- Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
fT Current Gain-Bandwidth Product
10
tOFF Turn OFF Time
5 mA VCE=330V, VBE=0
100 μA VCE=200V, VBE=0
1 mA VCE=200V, VBE=0ï¼Tc=125âï¼
1 mA VEB=6V, IC=0
VCE=1V, IC=5A
1
V IC=5A, IB=0.8A
1.2 V IC=5A, IB=0.8A
MHz VCE=10V,IC=0.5A
0.4 μS IC=5A, IB=0.8A
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