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| HBU406 Datasheet, PDF (1/2 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HBU406
APPLICATIONS
High Voltage Swltching .
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
-55~150
Tj Junction Temperature
150
PC Collector Dissipation Tc=25
60W
VCBO Collector-Base Voltage
40 0 V
VCEO Collector-Emitter Voltage
20 0 V
VEBO Emitter- Base Voltage
6V
IC Collector Current DC
7A
ICP Collector Current Pulse
10A
Ib Base Current
4A
TO-220
1 Base B
2 Collector C
3 Emitter E
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
Characteristics
ICES 1 Collector Cut-off Current
ICES 2
ICES 3
IEBO
HFE
Emitter Cut-off Current
DC Current Gain
VCE(sat)
VBE(on)
fT
tOFF
Collector- Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product
Turn OFF Time
Min Typ Max Unit
Test Conditions
VCE=400V, VEB=0
VCE=250V, VEB=0
VCE=250V, VEB=0 Tc=125
VEB=6V, IC=0
VCE=1V, IC=5A
IC=5A, IB=0.5A
VCE=5V, IC=0.5A
VCE=10V,IC=0.5A
IC=5A, IB=0.5A
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