HBTA20A60 Datasheet, PDF (1/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – INNER INSULATED TYPE TRIAC (II TO-220 PACKAGE)

Shantou Huashan Electronic Devices Co.,Ltd.
HBTA20A60
Features
* Repetitive Peak Off-State Voltage: 600V
* R.M.S On-state Current(I_T(RMS)=20A)
* High Commutation dv/dt
General Description
The Triac HBTA8A60 is suitable for AC switching application, phase
control application such as heater control, motor control, lighting control,
and static switching relay.
Absolute Maximum Ratings T_a=25
T_stg Storage Temperature
T_j Operating Junction Temperature
P_GM Peak Gate Power Dissipation
V_DRM Repetitive Peak Off-State Voltage
IT RMS
R.M.S On-State Current Tc=66
V_{G M} Peak Gate Voltage
I_GM Peak Gate Current
ITSM Surge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive)
V_ISO RMS Isolation Breakdown Voltage
Electrical Characteristics T_a=25
40~125
40~125
5W
600V
20A
10V
2.0A
170/190A
2500V
Symbol
Items
I_DRM
V_TM
I+_GT1
I- _GT1
I-_GT3
V+ _GT1
V- _GT1
V- _GT3
V_GD
(dv/dt)c
Rth(j-c)
I_H
Repetitive Peak Off-State Current
Peak On-State Voltage
Gate Trigger Current
Gate Trigger Current
Gate Trigger Current
Gate Trigger Voltage
Gate Trigger Voltage
Gate Trigger Voltage
Non-Trigger Gate Voltage
Critical Rate of Rise of Off-State
Voltage at Commutation
Thermal Resistance
Holding Current
Min.
0.2
10
25
Max.
2.0
1.6
30
30
30
1.5
1.5
1.5
2.5
Unit
Conditions
VD=VDRM, Single Phase,Half
mA _{Wave, TJ=125}
V ^IT^{=12A, Inst. Measurement}
mA V_D=6V, R_L=10 ohm
mA
mA
V
V
V
V
V/µS
/W
V_D=6V, R_L=10 ohm
V_D=6V, R_L=10 ohm
V_D=6V, R_L=10 ohm
V_D=6V, R_L=10 ohm
V_D=6V, R_L=10 ohm
T_J=125 ,V_D=1/2V_DRM
TJ=125 ,VD=2/3VDRM
(di/dt)c=-4.0A/ms
Junction to case
mA