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HBT139F-600 Datasheet, PDF (1/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – INSULATED TYPE TRIAC (TO-220F PACKAGE)
Shantou Huashan Electronic Devices Co.,Ltd.
HBT139F-600
INSULATED TYPE TRIAC (TO-220F PACKAGE)
█ Features
* Repetitive Peak Off-State Voltage: 600V
* R.M.S On-State Current(IT(RMS)=16A)
* High Commutation dv/dt
*Isolation Voltage(VISO=1500V AC)
█ General Description
TO-220F
This device is fully isolated package suitable for AC switching application,
phase control application such as fan speed and temperature modulation
control, lighting control and static switching relay.
█ Absolute Maximum Ratings(Ta=25℃)
12 3
Tstg——Storage Temperature………………………………………………………………… -40~150℃
Tj ——Operating Junction Temperature …………………………………………………… -40~125℃
PGM——Peak Gate Power Dissipation………………………………………………………………… 5W
VDRM——Repetitive Peak Off-State Voltage………………………………………………………… 600V
IT(RMS)——R.M.S On-State Current(Tc=41℃)………………………………………………… 16A
VGM——Peak Gate Voltage…………………………………………………………………………… 10V
IGM——Peak Gate Current…………………………………………………………………………… 2.0A
ITSM——Surge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive) ………………… 145/155A
VISO——Isolation Breakdown Voltage(R.M.S,A.C.1minute)………………………………………1500V
█ Electrical Characteristics(Ta=25℃)
Symbol
Items
Min
Max Unit
Conditions
IDRM Repetitive Peak Off-State Current
VD=VDRM,Single Phase,Half
2.0 mA
Wave, TJ=125℃
VTM Peak On-State Voltage
1.6 V IT=20A, Inst. Measurement
I+GT1 Gate Trigger Current(Ⅰ)
25 mA VD=6V, RL=10 ohm
I-GT1
I-GT3
V+GT1
V-GT1
Gate Trigger Current(Ⅱ)
Gate Trigger Current(Ⅲ)
Gate Trigger Voltage(Ⅰ)
Gate Trigger Voltage(Ⅱ)
25 mA VD=6V, RL=10 ohm
25 mA VD=6V, RL=10 ohm
1.5 V VD=6V, RL=10 ohm
1.5 V VD=6V, RL=10 ohm
V-GT3 Gate Trigger Voltage(Ⅲ)
1.5 V VD=6V, RL=10 ohm
VGD Non-Trigger Gate Voltage
0.2
Critical Rate of Rise of Off-State
(dv/dt)c Voltage at Commutation
10
V TJ=125℃,VD=1/2VDRM
V/µS TJ=125℃,VD=2/3VDRM (di/dt)c=-6A/ms
IH
Holding Current
20
mA
Rth(j-c) Thermal Resistance
3.5 ℃/W Junction to case