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HBT139F-600 Datasheet, PDF (1/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – INSULATED TYPE TRIAC (TO-220F PACKAGE) | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
HBT139F-600
INSULATED TYPE TRIAC (TO-220F PACKAGE)
â Features
* Repetitive Peak Off-State Voltage: 600V
* R.M.S On-State Current(IT(RMS)=16A)
* High Commutation dv/dt
*Isolation Voltageï¼VISO=1500V ACï¼
â General Description
TO-220F
This device is fully isolated package suitable for AC switching application,
phase control application such as fan speed and temperature modulation
control, lighting control and static switching relay.
â Absolute Maximum Ratingsï¼Ta=25âï¼
12 3
TstgââStorage Temperatureâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ -40~150â
Tj ââOperating Junction Temperature â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ -40~125â
PGMââPeak Gate Power Dissipationâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ 5W
VDRMââRepetitive Peak Off-State Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ 600V
ITï¼RMSï¼ââR.M.S On-State Currentï¼Tc=41âï¼â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ 16A
VGMââPeak Gate Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ 10V
IGMââPeak Gate Currentâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ 2.0A
ITSMââSurge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive) â¦â¦â¦â¦â¦â¦â¦ 145/155A
VISOââIsolation Breakdown Voltageï¼R.M.Sï¼A.C.1minuteï¼â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦1500V
â Electrical Characteristicsï¼Ta=25âï¼
Symbol
Items
Min
Max Unit
Conditions
IDRM Repetitive Peak Off-State Current
VD=VDRM,Single Phase,Half
2.0 mA
Wave, TJ=125â
VTM Peak On-State Voltage
1.6 V IT=20A, Inst. Measurement
I+GT1 Gate Trigger Currentï¼â
ï¼
25 mA VD=6V, RL=10 ohm
I-GT1
I-GT3
V+GT1
V-GT1
Gate Trigger Currentï¼â
¡ï¼
Gate Trigger Currentï¼â
¢ï¼
Gate Trigger Voltageï¼â
ï¼
Gate Trigger Voltageï¼â
¡ï¼
25 mA VD=6V, RL=10 ohm
25 mA VD=6V, RL=10 ohm
1.5 V VD=6V, RL=10 ohm
1.5 V VD=6V, RL=10 ohm
V-GT3 Gate Trigger Voltageï¼â
¢ï¼
1.5 V VD=6V, RL=10 ohm
VGD Non-Trigger Gate Voltage
0.2
Critical Rate of Rise of Off-State
(dv/dt)c Voltage at Commutation
10
V TJ=125â,VD=1/2VDRM
V/µS TJ=125â,VD=2/3VDRM (di/dt)c=-6A/ms
IH
Holding Current
20
mA
Rth(j-c) Thermal Resistance
3.5 â/W Junction to case
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