HBS170 Datasheet, PDF (1/4 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – N-Channel Enhancement Mode Field Effect Transistor

Shantou Huashan Electronic Devices Co.,Ltd.
HBS170
N-Channel Enhancement Mode Field Effect Transistor
General Description
These products have been designed to minimize on-state resistance
While provide rugged, reliable, and fast switching performance. They
can be used in most applications requiring up to 500mA DC. These
products are particularly suited for low voltage, low current applications
such as small servo motor control, power MOSFET gate drivers, and
other switching applications.
Features
High density cell design for low Rds(on).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
Maximum Ratings Ta=25 unless otherwise specified
TO-92
1- D 2-G 3-S
T_stg
T_j
V_DSS
V_DGR
V_GSS
I_D
P_D
Storage Temperature ------------------------------------------------------ -55~150
Operating Junction Temperature ---------------------------------------------- -55~150
Drain-Source Voltage ---------------------------------------------------------- 60V
Drain-Gate Voltage (R_GS 1M ) --------------------------------------------------------- 60V
Gate-Source Voltage ------------------------------------------------------------------------ ±20V
Drain Current (Continuous) ---------------------------------------------------------------- 500mA
Maximum Power Dissipation ------------------------------------------------------------ 0.83W
Electrical Characteristics Ta=25 unless otherwise specified
Symbol
BV_DSS
I_DSS
I_GSSF
V_GS(TH)
R_DS(ON)
g_FS
Ciss
Coss
Crss
ton
toff
Items
Min.
Drain-Source Breakdown Voltage 60
Zero Gate Voltage Drain Current
Gate – Body Leakage, Forward
Gate Threshold Voltage
0.8
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Time
Turn - Off Time
Typ. Max.
0.5
10
3.0
5
320
24
40
17 30
7 10
10
10
Unit
V
uA
nA
V
Ω
mS
pF
pF
pF
nS
nS
Conditions
V_GS=0V, I_D=100uA
V_DS =25V, V_GS=0V
V_GS=15V , V_DS =0V
V_DS = V_GS , ID=1mA
V_GS=10V, ID=200mA
V_DS=10V, ID=200mA
V_DS = 10 V, V_GS = 0 V,
f = 1.0 MHz
V_DD = 25 V, I_D = 200 m A,
V_GS = 10 V, R_GEN = 25 Ω