HBDW94C Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP DARLINGTON TRANSISTOR
HBDW94C
█ APPLICATIONS
Power Linear And Switching Applicatione.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -65~150℃
T_j——Junction Temperature……………………………… 150℃
P_C——Collector Dissipation（T_c=25℃）…………………… 80W
V_CBO——Collector-Base Voltage……………………………-100V
V_CEO——Collector-Emitter Voltage……………………… -100V
I_C——Collector Curren（t DC）……………………………… -12A
I_C——Collector Curren（t Pulse）………………………………-15A
I_B——Base Current…………………………………………-0.2A
TO-220
1―Base，B
2―Collector，C
3―Emitter, E
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCEO(SUS)
ICEO
IEBO
ICBO
HFE（1）
HFE（2）
HFE（3）
VCE(sat1)
VCE(sat2)
VBE(sat1)
VBE(sat2)
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Emitter-Base Cutoff Current
Collector Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
-100
1000
750
100
V I_C=-100mA, I_B=0
-1
mA V_CE=-100V, I_B=0
-2
mA V_EB=-5V, I_C=0
-100 μA V_CB=-100V, I_E=0
V_CE=-3V, I_C=-3A
20000
V_CE=-3V, I_C=-5A
V_CE=-3V, I_C=-10A
-2
V I_C=-5A, I_B=-20mA
-3
-2.5
V I_C=-10A, I_B=-100mA
V I_C=-5A,I_B=-20mA
-4
V I_C=-10A,I_B=-100mA