HBD681 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
HBD681
█ APPLICATIONS
Medium Power Linear switching.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -65~150℃
T_j——Junction Temperature……………………………… 150℃
P_C——Collector Dissipation（T_c=25℃）…………………… 40W
V_CBO——Collector-Base Voltage…………………………… 100V
V_CEO——Collector-Emitter Voltage………………………… 100V
V_EBO——Emitter-Base Voltage………………………………… 5V
I_C——Collector Current（Pulse）………………………………… 6A
I_C——Collector Curren（t DC）…………………………………… 4A
I_B——Base Current……………………………………………100mA
TO-126F
1―Emitter, E
2―Collector，C
3―Base，B
█ 电参数（ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
ICBO Collector Cut-off Current
IEBO Emitter Cut-off Current
ICES Collector Cut-off Current
*HFE DC Current Gain
750
*VCE(sat) Collector- Emitter Saturation Voltage
VBE(on) Base-Emitter On Voltage
VCEO(SUS) Collector-Emitter Sustaining Voltage
100
* Pulse Test:PW=300µS,Duty Cycie=1.5% Pulsed
200 μA V_CB=100V, I_E=0
2 mA V_EB=5V, I_C=0
500 μA V_CE=100V, V_EB=0
V_CE=3V, I_C=1.5mA
2.5 V I_C=1.5A, I_B=30mA
2.5 V V_CE=3V, I_C=1.5A
I_C=50mA, I_B=0