HBD436 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
HBD436
█ APPLICATIONS
Medium Power Linear And Switching Applicatione.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -65~150℃
T_j——Junction Temperature……………………………… 150℃
P_C——Collector Dissipation（T_c=25℃）…………………… 40W
V_CBO——Collector-Base Voltage………………………… -32V
V_CES——Collector-Emitter Voltage……………………… -32V
V_EBO——Emitter-Base Voltage……………………………… -5V
I_C——Collector Current（DC）……………………………… -4A
I_C——Collector Current（Pulse）………………………………-7A
I_B——Base Current（DC）……………………………………-1A
TO-220
1―Base，B
2―Collector，C
3―Emitter, E
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
BVCEO(SUS) Collector-Emitter Sustaining Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter-Base Cutoff Current
ICES
Collector Cutoff Current
HFE（1） DC Current Gain
*HFE（2）
*HFE（3）
*VCE(sat1) Collector- Emitter Saturation Voltage
*VBE(on) Base- Emitter On Voltage
fT
Current Gain-Bandwidth Product
*Pulse Test: PW=300μS,Duty Cycle=1.5% Pulsed
Min Typ Max Unit
Test Conditions
-32
V I_C=-100mA, I_B=0
-100 μA V_CB=-32V, I_E=0
-1 mA V_EB=-5V, I_C=0
-100 μA V_CE=-32V, V_BE=0
40 140
V_CE=-5V, I_C=-10mA
85 140
V_CE=-1V, I_C=-500mA
50
V_CE=-1V, I_C=-2A
-0.2 -0.5 V I_C=-2A, I_B=-0.2A
-1.1 V V_CE=-1V,I_C=-2A,
3
MHz Ic=-250mA, VCE=-1V