HBD435 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
HBD435
█ APPLICATIONS
Medium Power Linear And Switching Applicatione.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -65~150℃
T_j——Junction Temperature……………………………… 150℃
P_C——Collector Dissipation（T_c=25℃）…………………… 40W
V_CBO——Collector-Base Voltage………………………… 32V
V_CES——Collector-Emitter Voltage……………………… 32V
V_EBO——Emitter-Base Voltage……………………………… 5V
I_C——Collector Curren（t DC）………………………………… 4A
I_C——Collector Current（Pulse）………………………………7A
I_B——Base Current（DC）………………………………………1A
TO-220
1―Base，B
2―Collector，C
3―Emitter, E
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCEO(SUS) Collector-Emitter Sustaining Voltage
32
V I_C=100mA, I_B=0
ICBO
Collector Cutoff Current
100 μA V_CB=32V, I_E=0
IEBO
Emitter-Base Cutoff Current
1
mA V_EB=5V, I_C=0
ICES
Collector Cutoff Current
100 μA V_CE=32V, V_BE=0
HFE（1） DC Current Gain
40 130
V_CE=5V, I_C=10mA
*HFE（2）
85 140
V_CE=1V, I_C=500mA
*HFE（3）
50
V_CE=1V, I_C=2A
*VCE(sat1) Collector- Emitter Saturation Voltage
0.2 0.5 V I_C=2A, I_B=0.2A
*VBE(on) Base- Emitter On Voltage
1.1 V V_CE=1V,I_C=2A,
fT
Current Gain-Bandwidth Product
3
MHz Ic=250mA, VCE=1V
*Pulse Test: PW=300μS,Duty Cycle=1.5% Pulsed