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| HB857 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
HB857
APPLICATIONS
LOW FREQUENCY POWER AMPLIFIER
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
Tj Junction Temperature
PC Collector Dissipation Tc=25
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC Collector Current DC
55~150
150
40W
-70V
-50V
-5V
-4A
TO-220
1 Base B
2 Collector C
3 Emitter, E
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
HFE 1
HFE 2
VCE(sat)
VBE(on)
ft
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product
IC=-10 A, IE=0
IC=-50mA, IB=0
IE=-10 A IC=0
VCB=-50V, IE=0
VCE=-4V, IC=-1A
VCE=-4V, IC=-0.1A
IC=-2A, IB=-0.2A
VCE=-4V, IC=-1A
VCE=-4V, IC=-0.5A,
hFE Classification
B
C
D
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