HB834 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
HB834
APPLICATIONS
Low Frequency Power Amplifier.
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
T_j Junction Temperature
P_C Collector Dissipation T_c=25
P_C Collector Dissipation Ta=25
V_CBO Collector-Base Voltage
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C Collector Current
Ib Base Current
55~150
150
30W
1.5W
-60V
-60V
-7V
-3A
-0.5A
TO-220
1 Base B
2 Collector C
3 Emitter, E
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCEO
ICBO
IEBO
HFE 1
HFE 2
VCE(sat)
VBE(on)
ft
Cob
tON
tSTG
tF
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product
Output Capacitance
Turn-On Time
Storage Time
Fall Time
I_C=-50mA, I_B=0
V_CB=-60V, I_E=0
V_EB=-7V, I_C=0
V_CE=-5V, I_C=-0.5A
V_CE=-5V, I_C=-3A
I_C=-3A, I_B=-0.3A
V_CE=-5V, I_C=-0.5A
V_CE=-5V, I_C=-0.5A,
V_CB=-10V, I_E=0 f=1
I_B1= -I_B2=-0.2A
V_CC=-30V
hFE Classification
O
Y