HB772S Datasheet, PDF(1/1 Page) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

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HB772S Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd. P

PN P SILICON TRANSISTOR

HB772S

AUDIO FREQUENCY POWER AMPLIFIER

LOW SPEED SWITCHING

ABSOLUTE MAXIMUM RATINGS Ta=25

TO-92

Tstg Storage Temperature

-55~150

Tj Junction Temperature

150

PC Collector Dissipation

0.75W

VCBO Collector-Base Voltage

- 40 V

VCEO Collector-Emitter Voltage

- 30 V

VEBO Emitter - Base Voltage

-5V

IC Collector Current

-3A

ELECTRICAL CHARACTERISTICS Ta=25

1 Emitter E

2 Collector C

3 Base B

Symbol

ICBO

IEBO

HFE

VCE(sat)

VBE(sat)

Cob

Characteristics

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain-Bandwidth Product

Output Capacitance

Min Typ Max Unit

Test Conditions

VCB=-30V, IE=0

VEB=-3V, IC=0

VCE=-2V, IC=-1A

IC=-2 A , IB=-0.2A

IC=-2A, IB=-0.2A

VCE=-5V, IC=-0.1A

VCB=-10V, IE=0 ,f=1

hFE Classification