HB1274 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R A N S I S T O R
HB1274
█ APPLICATIONS
Low frequency power amplifier Applications.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation（Tc=25℃）……………………………20W
P_C——Collector Dissipation（Ta=25℃）……………………………2W
V_CBO——Collector-Base Voltage………………………………-60V
V_CEO——Collector-Emitter Voltage……………………………-60V
V_EBO——Emitter-Base Voltage………………………………-6V
I_C——Collector Curren（t DC）………………………………………-3A
I_C——Collector Current（Pulse）……………………………………-8A
TO-220F
1―Base，B
2―Collector，C
3―Emitter，E
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
-60
V I_C=-1mA, I_E=0
BVCEO Collector-Emitter Breakdown Voltage -60
V I_C=-5mA, I_B=0
BVEBO Emitter-Base Breakdown Voltage
-6
V I_E=-1mA，I_C=0
HFE（1） DC Current Gain
70
280
V_CE=-5V, I_C=-0.5A
HFE（2） DC Current Gain
20
V_CE=-5V, I_C=-3A
VCE(sat) Collector- Emitter Saturation Voltage
-0.4 -1.0 V I_C=-2A, I_B=-0.2A
VBE Base-Emitter Voltage
-0.8 -1.0 V V_CE=-5V, I_C=-0.5A
ICBO Collector Cut-off Current
-100 μA V_CB=-40V, I_E=0
IEBO Emitter Cut-off Current
-100 μA V_EB=-4V, I_C=0
fT Current Gain-Bandwidth Product
100
MHz V_CE=-5V, I_C=-0.5A
Cob Output Capacitance
60
pF V_CB=-10V, f=1MHz
█ hFE Classification
Q
R
S
70—140
100—200
140—280