HA940 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R A N S I S T O R
HA940
█ APPLICATIONS
Vertical Deflection Output Power Amplifier.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation（Tc=25℃）……………………………25W
P_C——Collector Dissipation（Ta=25℃）…………………………1.5W
V_CBO——Collector-Base Voltage………………………………-150V
V_CEO——Collector-Emitter Voltage……………………………-150V
V_EBO——Emitter-Base Voltage………………………………-5V
I_C——Collector Current……………………………………………-1.5A
Ib——Base Current………………………………………………-0.5A
TO-220
1―Base，B
2―Collector，C
3―Emitter，E
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
BVCBO
BVCEO
BVEBO
HFE
VCE(sat)
VBE(ON)
ICBO
IEBO
fT
Cob
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cut-off Current
Emitter Cut-off Current
Current Gain-Bandwidth Product
Output Capacitance
Min
-150
-150
-5
40
-0.65
Typ
75
-0.75
4
55
Max
140
-1.5
-0.85
-10
-10
Unit
V
V
V
V
V
μA
μA
MHz
pF
Test Conditions
I_C=-500μA, I_E=0
I_C=-10mA, I_B=0
I_E=-500μA，I_C=0
V_CE=-10V, I_C=-500mA
I_C=-500mA, I_B=-50mA
V_CE=-10V, I_C=-500mA
V_CB=-120V, I_E=0
V_EB=-5V, I_C=0
V_CE=-10V,I_C=-500mA
V_CB=-10V, I_E=0,f=1MHz