HA56 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R A N S I S T O R
HA56
█ APPLICATIONS
General Purpose Amplifier.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………625mW
V_CBO——Collector-Base Voltage………………………………-80V
V_CEO——Collector-Emitter Voltage……………………………-80V
V_EBO——Emitter-Base Voltage………………………………-4V
I_C——Collector Current……………………………………-500mA
TO-92
1―Emitter，E
2―Base，B
3―Collector，C
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCEO Collector-Emitter Breakdown Voltage -80
BVEBO Emitter-Base Breakdown Voltage
-4
HFE（1） DC Current Gain
50
HFE（2） DC Current Gain
50
VCE(sat) Collector- Emitter Saturation Voltage
VBE（on） Base-Emitter On Voltage
ICBO Collector Cut-off Current
ICEO Collector Cut-off Current
fT Current Gain-Bandwidth Product
50
V I_C=-1mA, I_B=0
V I_E=-100μA，I_C=0
V_CE=-1V, I_C=-10mA
V_CE=-1V, I_C=-100mA
-0.25 V I_C=-100mA, I_B=-10mA
-1.2 V V_CE=-1V, I_C=-100mA
-100 nA V_CB=-80V, I_E=0
-100 nA V_CE=-60V, I_B=0
MHz
V_CE=-1V,I_C=-100mA,
f=100MHz