HA44 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
HA44
HIGH VOLTAGE TRANSISTOR
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
T_j Junction Temperature
P_C Collector Dissipation
V_CBO Collector-Base Voltage
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C Collector Current
-55~150
150
625mW
500V
400V
6V
300mA
TO-92
1 Emitter E
2 Base B
3 Collector C
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
HFE 1
HFE 2
HFE 3
HFE 4
VCE(sat1)
VCE(sat2)
VCE(sat3)
VBE(sat)
Cob
Characteristics
Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Voltage
500
Collector-Emitter Breakdown Voltage
400
Emitter-Base Breakdown Voltage
6
Collector Cut-off Current
Emitter-Base Cut-off Current
Collector Cut-off Current
DC Current Gain
40
60
45
40
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
7
100
100
500
300
0.4
0.5
0.75
0.75
V
I_C=100 A, I_E=0
V
I_C=1mA, I_B =0
V
I_E=100 A I_C=0
nA
V_CB=400V, I_E=0
nA
V_EB=4V, I_C=0
nA
V_CE=-400V, V_BE=0
V_CE=10V, I_C=1mA
V_CE=10V, I_C=10mA
V_CE=10V, I_C=50mA
V_CE=10V, I_C=100mA
V
I_C=1mA, I_B=0.1mA
V
I_C=10mA, I_B=1mA
V
I_C=50mA, I_B=5mA
V
I_C=10mA, I_B=1mA
pF V_CB=20V, I_E=0 F=1MHz