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HA1962 Datasheet, PDF (1/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – Power Amplifier Applications | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R A N S I S T O R
HA1962
â APPLICATIONS
â Power Amplifier Applications.
â Complementary to HC5242.
â ABSOLUTE MAXIMUM RATINGSï¼Ta=25âï¼
TstgââStorage Temperatureâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ -65~150â
TjââJunction Temperatureâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦150â
PCââCollector Dissipationï¼Tc=25âï¼â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦130W
VCBOââCollector-Base Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ -230V
VCEOââCollector-Emitter Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ -230V
VEBOââEmitter-Base Voltageâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ -5V
ICââCollector Currenï¼t DCï¼â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ -15A
ICPââCollector Currenï¼t Pulseï¼â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ -30A
IbââBase Currentâ¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦â¦ -1.5A
TO-3P
1âBaseï¼B
2âCollectorï¼C
3âEmitterï¼E
â ELECTRICAL CHARACTERISTICSï¼Ta=25âï¼
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
BVCEO Collector-Emitter Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
ICBO Collector Cut-off Current
IEBO Emitter Cut-off Current
HFEï¼1ï¼ DC Current Gain
HFEï¼2ï¼ DC Current Gain
VCE(sat) Collector- Emitter Saturation Voltage
VBE Base-Emitter Voltage
fT Current Gain-Bandwidth Product
Cob Output Capacitance
-230
V
-230
V
-5
V
-5 μA
-5 μA
55
160
35
-1.5 -3 V
-1.5 V
30
MHz
360
pF
IC=-100μA, IE=0
IC=-50mA, IB=0
IE=-100μAï¼IC=0
VCB=-230V, IE=0
VEB=-5V, IC=0
VCE=-5V, IC=-1A
VCE=-5V, IC=-7A
IC=-8A, IB=-0.8A
VCE=-5V, IC=-7A
VCE=-5V,IC=-1A
VCB=-10V, IE=0ï¼f=1MHz
â hFE(1) Classification
R
55 - 110
O
80 - 160
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