HA143E Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP DIGITAL T R A N S I S T O R
HA143E
APPLICATIONS
Switching Circuit Interface Circuit
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
T_j Junction Temperature
P_C Collector Dissipation
V_CBO Collector-Base Voltage
V_CEO Collector-Emitter Voltage
V_EBO Emitter- Base Voltage
I_C Collector Current
-55~150
150
300mW
- 50 V
- 50 V
-10V
-100mA
TO-92S
1 Emitter E
2 Collector,C
3 Base B
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO
BVCEO
ICBO
ICEO
IEBO
HFE
VCE(sat)
R1
R2/R1
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Input Off Voltage
Input On Voltage
Input Resistor
Resistance Ratio
I_C=-10 A, I_E=0
I_C=-0.1mA, I_B=0
A VCB=-40V, IE=0
A VCE=-40V, IB=0
A VEB=-5V, IC=0
V_CE=-5V, I_C=-10mA
I_C=-10mA, I_B=-0.5mA
V_CE=-5V, I_C=-0.1mA
V_CE=-0.2V, I_C=-20mA
fT Current Gain-Bandwidth Product
Cob Output Capacitance
V_CE=-10V,I_C=-5mA
V_CB=-10V,f=1