HA114Y Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP DIGITAL TRANSISTOR
HA114Y
APPLICATIONS
Switching Circuit Interface Circuit
ABSOLUTE MAXIMUM RATINGS T_a=25
TO-92S
T_stg Storage Temperature
-55~150
T_j Junction Temperature
150
P_C Collector Dissipation
300mW
V_CBO Collector-Base Voltage
- 50 V
V_CEO Collector-Emitter Voltage
-50V
V_EBO Emitter- Base Voltage
-6V
I_C Collector Current
-1 00 m A
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ Max
BVCBO Collector-Base Breakdown Voltage
BVCEO Collector-Emitter Breakdown Voltage
ICBO Collector Cut-off Current
ICEO Collector Cut-off Current
IEBO Emitter Cut-off Current
HFE DC Current Gain
VCE(sat) Collector- Emitter Saturation Voltage
R1
R1/ R2
fT
Cob
Current Gain-Bandwidth Product
Output Capacitance
1 Emitter E
2 Collector C
3 Base B
Unit
Test Conditions
I_C=-10 A, I_E=0
I_C=-1mA, I_B=0
V_CB=-40V, I_E=0
V_CE=-40V, I_B=0
V_EB=-5V, I_C=0
V_CE=-5V, I_C=-5mA
I_C=-10mA, I_B=-0.5mA
V_CE=-5V, I_C=-0.1mA
V_CE=-0.2V, I_C=-10mA
V_CE=-10V, I_C=-5mA
V_CB=-10V, f=1